ECSE 433 Physical Basis of Transistor Devices
4 credits · Electrical & Computer Engr · Faculty of Engineering · Offered: Winter
Quantitative analysis of diodes and transistors. Semiconductor fundamentals, equilibrium and non-equilibrium carrier transport, and Fermi levels. PN junction diodes, the ideal diode, and diode switching. Bipolar Junction Transistors (BJT), physics of the ideal BJT, the Ebers-Moll model. Field effect…
Prerequisites
ECSE 251, ECSE 331, and MIME 262 (3-4-5)
Prerequisite courses: ECSE 251, ECSE 331, MIME 262
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